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STD2NB80-1 Даташит - STMicroelectronics

Номер в каталогеОписание (Функция)производитель
STD2NB80-1 N-CHANNEL 800V - 4.6 Ω - 1.9A - IPAK/DPAK PowerMESH™ MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
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STD2NB80-1 Datasheet PDF : STD2NB80-1 pdf   
STD2NB80-1 image

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 4.6 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ FOR SMD DPAK VERSION CONTACT SALES OFFICE

APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

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