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STB4NC80Z Даташит - STMicroelectronics

Номер в каталогеОписание (Функция)производитель
STB4NC80Z N-CHANNEL 800V - 2.4Ω - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
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STB4NC80Z Datasheet PDF : STB4NC80Z pdf   
STP4NC80ZFP image

DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

■ TYPICAL RDS(on) = 2.4 Ω
■ EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO-SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW GATE INPUT RESISTANCE
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT

 

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