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P6NC80 Даташит - STMicroelectronics

Номер в каталогеОписание (Функция)производитель
P6NC80 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
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P6NC80 Datasheet PDF : P6NC80 pdf   
STP6NC80Z image

DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requested by a large variety of single-switch applications.

■ TYPICAL RDS(on) = 1.5Ω
■ EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW GATE INPUT RESISTANCE
■ GATE CHARGE MINIMIZED

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