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NT256D64S8HA0G-6 Datasheet PDF - ETC1

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NT256D64S8HA0G-6 Datasheet PDF : NT256D64S8HA0G-6 pdf     
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NT256D64S8HA0G-6 is an unbuffered 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory Module (DIMM), organized as a dual-bank high-speed memory array. The 32Mx64 module is a two-bank DIMM that uses sixteen 16Mx8 DDR SDRAMs in 400 mil TSOP packages. The DIMM achieves high-speed data transfer rates of up to 333MHz. The DIMM is intended for use in applications operating from 133 MHz to 166 MHz clock speeds with data rates of 266 to 333 MHz. Clock enable CKE0 and / or CKE1 controls all devices on the DIMM.

• 184-Pin Unbuffered 8-Byte Dual In-Line Memory Module
• 32Mx64 Double Data Rate (DDR) SDRAM DIMM
• Performance :
• Intended for 166 MHz and 133 MHz applications
• Inputs and outputs are SSTL-2 compatible
• VDD = 2.5Volt ± 0.2, VDDQ = 2.5Volt ± 0.2
• Single Pulsed RAS interface
• SDRAMs have 4 internal banks for concurrent operation
•  Module has two physical banks
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions. Also aligns QFC transitions with clock during Read cycles
• Address and control signals are fully synchronous to positive clock edge
• Programmable Operation:
    - DIMM CAS Latency: 2, 2.5
    - Burst Type: Sequential or Interleave
    - Burst Length: 2, 4, 8
    - Operation: Burst Read and Write
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 12/10/2 Addressing (row/column/bank)
• 15.6 ms Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
• SDRAMs in 66-pin TSOP Type II Package


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