DESCRIPTION AND APPLICATIONS
The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200’s active areas are passivated with Si3N4, and the P70 ceramic package is ideal for low-cost, high-performance applications that require a surface-mount package.
Typical applications include high dynamic range receiver preamplifiers for commercial applications including Cellular/PCS systems and other types of commercial wireless systems.
♦ 20 dBm Output Power at 1-dB Compression at 18 GHz
♦ 9.5 dB Power Gain at 18 GHz
♦ 16 dB Small Signal Gain at 2 GHz
♦ 0.8 dB Noise Figure at 2 GHz