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LET21030C Даташит - STMicroelectronics

Номер в каталогеОписание (Функция)производитель
LET21030C RF POWER TRANSISTORS Ldmos Enhanced Technology ST-Microelectronics
STMicroelectronics ST-Microelectronics
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LET21030C Datasheet PDF : LET21030C pdf   
LET21030C image

DESCRIPTION
The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.

Designed for GSM / EDGE / IS-97 / WCDMA applications

• EXCELLENT THERMAL STABILITY
• POUT = 30 W with 11 dB gain @ 2170 MHz
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION

 

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