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LET19060C Даташит - STMicroelectronics

Номер в каталогеОписание (Функция)производитель
LET19060C RF POWER TRANSISTORS Ldmos Enhanced Technology ST-Microelectronics
STMicroelectronics ST-Microelectronics
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LET19060C Datasheet PDF : LET19060C pdf   
LET19060C image

DESCRIPTION
The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

• IS-97 CDMA PERFORMANCES
    POUT = 7.5 W
    EFF. = 18 %
• EDGE PERFORMANCES
    POUT = 30 W
    EFF. = 25 %
• GSM PERFORMANCES
    POUT = 65 W
    EFF. = 45 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT/OUTPUT MATCHING
• ESD PROTECTION

 

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