datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  ST-Microelectronics  >>> LET19060C PDF

LET19060C Datasheet PDF - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
Other PDF
  no available.
PDF
LET19060C Datasheet PDF : LET19060C pdf     
LET19060C image

DESCRIPTION
The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

• IS-97 CDMA PERFORMANCES
    POUT = 7.5 W
    EFF. = 18 %
• EDGE PERFORMANCES
    POUT = 30 W
    EFF. = 25 %
• GSM PERFORMANCES
    POUT = 65 W
    EFF. = 45 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT/OUTPUT MATCHING
• ESD PROTECTION

 

Номер в каталоге
Компоненты Описание
PDF
производитель
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz
Infineon Technologies
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
Infineon Technologies
RF Power LDMOS Transistors
Freescale Semiconductor
RF Power LDMOS Transistors
Freescale Semiconductor
LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V
M/A-COM Technology Solutions, Inc.
LDMOS RF Line Power FET Transistor 15 W , 800-1700 MHz, 26V
M/A-COM Technology Solutions, Inc.
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Polyfet RF Devices

Share Link: 

English 한국어 简体中文 русский español

All Rights Reserved© datasheetbank.com [ 個人情報 保護方針 ] [ リクエストデータシート ]