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LC801 Даташит - Polyfet RF Devices

Номер в каталогеОписание (Функция)производитель
LC801 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Polyfet-RF
Polyfet RF Devices Polyfet-RF
Другие PDF  недоступен.
LC801 Datasheet PDF : LC801 pdf   
LC801 image

General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high Ft transistors with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
20.0 Watts Single Ended
Package Style AC

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
ROHS COMPLIANT

 

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