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FQPF5N50CT Даташит - Fairchild Semiconductor

Номер в каталогеОписание (Функция)производитель
FQPF5N50CT 500V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
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FQPF5N50CT Datasheet PDF : FQPF5N50CT pdf   
FQPF5N50C image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 5A, 500V, RDS(on)= 1.4Ω@VGS= 10 V
• Low gate charge ( typical 18nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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