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FQPF58N08 Даташит - Fairchild Semiconductor

Номер в каталогеОписание (Функция)производитель
FQPF58N08 80V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
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FQPF58N08 Datasheet PDF : FQPF58N08 pdf   
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

• 35A, 80V, RDS(on) = 0.024Ω @VGS = 10 V
• Low gate charge ( typical 50 nC)
• Low Crss ( typical 120 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


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