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FQPF55N10 Даташит - Fairchild Semiconductor

Номер в каталогеОписание (Функция)производитель
FQPF55N10 100V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
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FQPF55N10 Datasheet PDF : FQPF55N10 pdf   
FQPF55N10 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Features
• 34.2A, 100V, RDS(on) = 0.026Ω @VGS = 10 V
• Low gate charge ( typical 75 nC)
• Low Crss ( typical 130 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

 

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