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FQP50N06 Даташит - Thinki Semiconductor Co., Ltd.

Номер в каталогеОписание (Функция)производитель
FQP50N06 50A,60V Heatsink Planar N-Channel Power MOSFET THINKISEMI
Thinki Semiconductor Co., Ltd. THINKISEMI
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FQP50N06 Datasheet PDF : FQP50N06 pdf   
FQP50N06 image

General Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M pkg is well suited for adaptor power unit and small power inverter application.

• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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