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FQP3N80 Даташит - Fairchild Semiconductor

Номер в каталогеОписание (Функция)производитель
FQP3N80 800V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
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FQP3N80 Datasheet PDF : FQP3N80 pdf   
FQP3N80 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 3.0A, 800V, RDS(on)= 5.0Ω@VGS= 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 7.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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