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EFC240D Даташит - Excelics Semiconductor, Inc.

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EFC240D Low Distortion GaAs Power FET Excelics
Excelics Semiconductor, Inc. 
Другие PDF  недоступен.
EFC240D Datasheet PDF : EFC240D pdf   
EFC240D image

Low Distortion GaAs Power FET

• +31.0dBm TYPICAL OUTPUT POWER
• 18.5dB TYPICAL POWER GAIN AT 2GHz
• HIGH BVgd FOR 10V BIAS
• 0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 40mA PER BIN RANGE

 

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