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EFC120B Даташит - Excelics Semiconductor, Inc.

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EFC120B Low Distortion GaAs Power FET Excelics
Excelics Semiconductor, Inc. 
Другие PDF  недоступен.
EFC120B Datasheet PDF : EFC120B pdf   
EFC120B image

Low Distortion GaAs Power FET

• +28.0dBm TYPICAL OUTPUT POWER
• 9.5dB TYPICAL POWER GAIN AT 12GHz
• HIGH BVgd FOR 10V BIAS
• 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 20mA PER BIN RANGE

 

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