datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Philips  >>> BF909 PDF

BF909 Datasheet PDF - Philips Electronics

Номер в каталоге
Компоненты Описание
производитель
BF909
Philips
Philips Electronics Philips
Other PDF
  no available.
PDF
BF909 Datasheet PDF : BF909 pdf     
BF909 image

DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

FEATURES
• Specially designed for use at 5 V supply voltage
• High forward transfer admittance
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.

APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

Page Link's: 1  2  3  4  5  6  7  8  9  10  11 
 

Номер в каталоге
Компоненты Описание
PDF
производитель
N-channel dual gate MOS-FETs
NXP Semiconductors.
N-channel dual gate MOS-FETs
NXP Semiconductors.
N-channel dual-gate MOS-FETs
NXP Semiconductors.
N-channel dual-gate MOS-FETs
NXP Semiconductors.
Dual N-channel dual gate MOS-FETs
NXP Semiconductors.
N-channel dual gate MOS-FETs
NXP Semiconductors.
N-channel dual-gate MOS-FETs
NXP Semiconductors.
Dual-gate MOS-FETs
NXP Semiconductors.
N-channel dual-gate PoLo MOS-FETs
NXP Semiconductors.
N-channel dual gate MOS-FETs
NXP Semiconductors.

Share Link: 

English 한국어 简体中文 русский español

All Rights Reserved© datasheetbank.com [ 個人情報 保護方針 ] [ リクエストデータシート ]