Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
• VHF and UHF applications with 9 V supply voltage, such as television tuners and professional communications equipment.