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BF1100R Даташит - NXP Semiconductors.

Номер в каталогеОписание (Функция)производитель
BF1100R Dual-gate MOS-FETs NXP
NXP Semiconductors. NXP
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BF1100R Datasheet PDF : BF1100R pdf   
BF1100R image

DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

FEATURES
• Specially designed for use at 9 to 12 V supply voltage
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.

APPLICATIONS
• VHF and UHF applications such as television tuners and professional communications equipment.

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