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APT10M11JVRU3 Datasheet PDF - Microsemi Corporation

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APT10M11JVRU3
Microsemi
Microsemi Corporation Microsemi
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APT10M11JVRU3 Datasheet PDF : APT10M11JVRU3 pdf     
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Features
• Power MOS V® MOSFETs
    - Low RDSon
    - Low input and Miller capacitance
    - Low gate charge
    - Fast intrinsic diode
    - Avalanche energy rated
    - Very rugged
• ISOTOP® Package (SOT-227)
• Very low stray inductance
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Very rugged
• Low profile
• RoHS Compliant

Application
• AC and DC motor control
• Switched Mode Power Supplies

 

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