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APT10090 Datasheet PDF - Advanced Power Technology

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APT10090
APT
Advanced Power Technology  APT
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APT10090 Datasheet PDF : APT10090 pdf     
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APTs patented metal gate structure.

• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package

 

Номер в каталоге
Компоненты Описание
PDF
производитель
SILICON N & P CHNAAEL MOS TYPE POWER MOS FET MODULE
Toshiba
MOS FIELD EFFECT TRANSISTOR / SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
MOS FIELD EFFECT TRANSISTOR / SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
MOS FIELD EFFECT TRANSISTOR / SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
Toshiba
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE(MOS FIELD EFFECT TRANSISTOR)
NEC => Renesas Technology
TRANSISTOR SILICON N CHANNEL MOS TYPE(π-MOS)
Unspecified
MOSFETs Silicon N-Channel MOS (U-MOS VII-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOS-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOS IV)
Toshiba

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